Electronic Devices And Circuits - Study Mode
[#221] An n-type of silicon can be formed by adding impurity of: 1. Phosphorous 2. Arsenic 3. Boron 4. Aluminium Which of the above are correct?
Correct Answer
(A) 1 and 2
[#222] Which of the following does not show non-linear V-I characteristics?
Correct Answer
(C) Thermistor, at a fixed temperature
[#223] In a p-type semiconductor, acceptor concentration is 10 13 /cm 3 and intrinsic concentration is 1.5 × 10 16 /cm 3 , then find electron concentration?
Correct Answer
(A) 2.25 × 10 19 /cm 3
[#224] When a junction diode is used in switching applications, the forward recovery time is
Correct Answer
(B) negligible in comparison to the reverse recovery time
[#225] A semi conductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with N D = 10 19 /cm 3 . If the excess electron concentration in the steady state is ∆n = 10 15 /cm 3 and if τ p = 10µsec. (minority carrier life time) the generation rate due to irradiation
Correct Answer
(A) is 10 20 e-h pairs/cm 3 /s