Analog Electronics - Study Mode

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[#226] Leakage current approximately doubles for every 10°C increase in temperature of a silicon transistor. If a silicon transistor has I CBO = 1000 nA at 30°C, what is its leakage current at 90°C?

(A) 32 µA

(B) 64 µA

(C) 16 µA

(D) 128 µA

Correct Answer

(B) 64 µA

[#227] In an RC differentiator, the condition for differentiation is

(A) RC >> 0.16T

(B) RC << 0.16T

(C) RC >> T/0.16

(D) RC << T/0.16

Correct Answer

(B) RC << 0.16T

[#228] A circuit is shown in the given figure. The largest value of R L that can be used is

(A) 100 Ω

(B) 400 Ω

(C) 2 kΩ

(D) 20 kΩ

Correct Answer

(B) 400 Ω

[#229] A high gain MESFET packaged device of case-to-channel thermal resistance of the device is 4.5°C/Watt provides 8W RF output power taking 20W DC power. What will be the channel temperature of the device if the case temperature of the device maintained at 55°C?

(A) 109°C

(B) 145°C

(C) 59.5°C

(D) 91°C

Correct Answer

(A) 109°C

[#230] What is the percentage reduction in gain of an amplifier due to introduction of 20 dB of negative feedback?

(A) 100%

(B) 50%

(C) 90%

(D) 70%

Correct Answer

(C) 90%