Electronics Gk

Name: _____________________

Date: _____________________

Instructions: Answer all questions. Write your answers clearly in the space provided.

Question 1:

An integrated circuit, also called an IC chip, is a group of electronic circuits built on a small plate made up of . . . . . . . .

A. copper
B. silicon
C. silica
D. chromium
Answer: _________
Question 2:

Which one of the following is not a semiconductor?

A. Silicon
B. Germanium
C. Quartz
D. Gallium arsenide
Answer: _________
Question 3:

Digital circuits are used in

A. electronic watches
B. washing machines
C. TV
D. All of the above
Answer: _________
Question 4:

. . . . . . . . was later discovered and replaced with silicon.

A. Rubidium
B. Scandium
C. Germanium
D. Gallium
Answer: _________
Question 5:

The full form of LED is

A. Light Emitting Diode
B. Light Emitting Device
C. Light Enhancing Device
D. Light Enhancing Diode
Answer: _________
Question 6:

The p - n junction diode is used as

A. An amplifier
B. A rectifier
C. An oscillator
D. A modulator
Answer: _________
Question 7:

Germanium is mainly used for . . . . . . . .

A. Mediator
B. Semiconductor
C. Conductor
D. Insulator
Answer: _________
Question 8:

The figure shown below represents-

A. Power diode
B. Zener diode
C. NPN transistor
D. PNP transistor
Answer: _________
Question 9:

Which one among the following components is used as an amplifying device?

A. Transformer
B. Diode
C. Capacitor
D. Transistor
Answer: _________
Question 10:

In p - n junction, avalanche current flows in circuit when biasing is

A. forward
B. reverse
C. zero
D. excess
Answer: _________
Question 11:

Tunnel diode is a

A. High resistivity p-n junction diode
B. Slow switching device
C. Amplifier device
D. Highly doped p-n junction diode
Answer: _________
Question 12:

To obtain a P-type semiconductor-

A. The impurity having five valence is added
B. Three valent impurities
C. Both types of compounds
D. None of these
Answer: _________
Question 13:

Which among the following is most helpful in energy savings?

A. Incandescent bulb
B. Fluorescent tube light
C. Compact fluorescent lamp
D. LED bulb
Answer: _________
Question 14:

Assertion (A) Light Emitting Diode (LED) emits spontaneous radiation. Reason (R) LED are forward biased p - n junction.

A. Both A and R are true and R is the correct explanation of A
B. Both A and R are true, but R is not the correct explanation of A
C. A is true, but R is false
D. A is false, but R is true
Answer: _________
Question 15:

When does a break down occur in junction?

A. Under extreme temperature conditions
B. With forward biased
C. Under reverse biased
D. Due to manufacture defects
Answer: _________
Question 16:

In a n-type semiconductor

A. electrons are the only carriers
B. holes are the only carriers
C. electrons are the majority carriers and holes are the minority carriers
D. None of the above
Answer: _________
Question 17:

Zener diode is used as

A. Half wave rectifier
B. Full wave rectifier
C. AC voltage stabiliser
D. DC voltage stabiliser
Answer: _________
Question 18:

NPN transistors are preferred to PNP transistors because they have

A. low cost
B. low dissipation energy
C. capability of handing large power
D. electrons having high mobility than holes
Answer: _________
Question 19:

The majority charge carriers in a p-type semiconductor are

A. free electrons
B. conduction electrons
C. ions
D. holes
Answer: _________
Question 20:

Where is a transistor most likely to be found?

A. Wrist watch
B. Fuse
C. Hearing aid
D. Fluorescent lamp
Answer: _________
Question 21:

The reverse biasing in a p-n junctions diode

A. decrease the potential barrier
B. increase the potential barrier
C. increase the number of minority charge carries
D. increases the number of majority charge carries
Answer: _________
Question 22:

In atoms of germanium, arsenic, selenium and bromine there are . . . . . . . . orbits.

A. 7
B. 5
C. 3
D. 4
Answer: _________
Question 23:

When a piece of pure silicon is doped with aluminium, then

A. the conductivity of the doped silicon piece will remain the same
B. the doped silicon piece will become n-type
C. the doped silicon piece will become p-type
D. the resistivity of the doped silicon piece will increase
Answer: _________
Question 24:

. . . . . . . . is a semiconductor

A. Pb
B. Ga
C. Sn
D. Ge
Answer: _________
Question 25:

Light Emitting Diode (LED) is used in electronic devices, such as television emits . . . . . . . .

A. ultraviolet rays
B. x-rays
C. radio waves
D. visible light
Answer: _________
Question 26:

Consider the following statements. 1. A p - n junction diode is a basic semiconductor device. 2. A p - n junction diode can work as excellent rectifier. 3. The p - n junction diode cannot be used as a half-wave rectifier. Which of the statements given above is/are correct?

A. Only 1
B. Only 3
C. 1 and 2
D. All of these
Answer: _________
Question 27:

Avalanche breakdown is due to

A. collision of minority charge carrier
B. increase in depletion layer thickness
C. decrease in depletion layer thickness
D. None of the above
Answer: _________
Question 28:

Silicon is which type of material?

A. Semiconductor
B. Insulator
C. Conductor
D. No option is correct
Answer: _________
Question 29:

Consider the following statements. 1. Zener diode is not used as a voltage stabiliser. 2. A Solar cell is a p - n junction diode which converts electrical energy into solar energy. 3. LED is an important light source used in optical communication. Which of the statement given above is/are correct?

A. Only 1
B. Only 3
C. 1 and 2
D. All of these
Answer: _________
Question 30:

In a bi-polar junction transistor,

A. all the three regions (the emitter, the base and the collector) have equal concentrations of impurity
B. the emitter has the least concentration of impurity
C. the collector has the least concentration of impurity
D. the base has the least concentration of impurity
Answer: _________
Question 31:

When donor type impurity is added to the semiconductor system. Then

A. electrons will be generated and N-type material
B. electrons will be generated and P-type material
C. Holes will be generated and P-type material
D. Holes will be generated and N-type material
Answer: _________
Question 32:

Assertion (A) An N-type semiconductor has a large number of electrons but still it is electrically neutral. Reason (R) An N-type semiconductor is obtained by doping an intrinsic semiconductor with a pentavalent impurity.

A. Both A and R are true and R is the correct explanation of A
B. Both A and R are true, but R is not the correct explanation of A
C. A is true, but R is false
D. A is false, but R is true
Answer: _________
Question 33:

Which of the following is widely used in making semiconductor chips?

A. Radium
B. Sodium
C. Germanium
D. Sulphur
Answer: _________
Question 34:

Doping in semi-conductor glossary is:

A. Semi-conductor is a process of purifying matter
B. Doping is a process of increasing the electrons or holes
C. Is a process of increasing external atoms
D. Is a process of increasing the biased potential
Answer: _________
Question 35:

Match the following. List-I List-II a. Germanium at 0 K 1. n-type semiconductor b. Germanium at room temperature 2. p-type semiconductor c. Germanium doped with indium 3. Insulator d. Germanium doped with arsenic 4. Intrinsic semiconductor

A. a-1, b-2, c-3, d-4
B. a-4, b-3, c-2, d-1
C. a-3, b-4, c-2, d-1
D. a-4, b-3, c-1, d-2
Answer: _________
Question 36:

The purpose of the amplifier is to:

A. To increase the voltage, power or current, of the input signals
B. Decreasing the weighted signal under its input
C. Causing distortion in the weighted signal
D. Both B and C
Answer: _________
Question 37:

Which of the following is not a semiconductor?

A. Silicon
B. Krypton
C. Selenium
D. Germanium
Answer: _________
Question 38:

Integrated circuits are made up of which of the following?

A. Aluminium
B. Silicon
C. Glass
D. Iron
Answer: _________
Question 39:

The diode is used as a . . . . . . . .

A. rectifier
B. amplifier
C. magnifier
D. purifier
Answer: _________
Question 40:

The term LASER stand for

A. Light Amplification by Stimulated Emission of Radiation
B. Light Amplification by Spontaneous Emission of Radiation
C. Light Amplification by Stimulated Emission of Rays
D. Light Amplification by Stimulated Energy of Radiation
Answer: _________
Question 41:

Eca-Silicon is known as-

A. silicon
B. gallium
C. Germanium
D. Aluminum
Answer: _________
Question 42:

MOS stands for-

A. Metal Oxide Semiconductor
B. Most often Store
C. Method organized Stack
D. None of these
Answer: _________

Answer Key

1: B
2: C
3: D
4: C
5: A
6: B
7: B
8: D
9: D
10: B
11: D
12: B
13: D
14: A
15: C
16: C
17: C
18: D
19: D
20: C
21: B
22: D
23: C
24: D
25: C
26: C
27: B
28: A
29: B
30: D
31: A
32: B
33: C
34: B
35: C
36: A
37: B
38: B
39: A
40: A
41: C
42: A